n - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 2 5 0 6 n u b p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n f e a t u r e s a p p l i c a t i o n s 2 5 v / 6 0 a , r d s ( o n ) = 4 . 8 m w ( t y p . ) @ v g s = 1 0 v r d s ( o n ) = 7 m w ( t y p . ) @ v g s = 4 . 5 v s u p e r h i g h d e n s e c e l l d e s i g n a v a l a n c h e r a t e d r e l i a b l e a n d r u g g e d l e a d f r e e a v a i l a b l e ( r o h s c o m p l i a n t ) p o w e r m a n a g e m e n t i n d e s k t o p c o m p u t e r o r d c / d c c o n v e r t e r s n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s a n d c o m p a t i b l e w i t h b o t h s n p b a n d l e a d - f r e e s o l d i e r i n g o p e r a t i o n s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . apm2506n handling code temp. range package code package code ub : to-251 operating junction temp. range c : -55 to 150 c handling code pb : plastic bag lead free code l : lead free device blank : original device apm2506n ub : apm2506n xxxxx xxxxx - date code lead free code t o p v i e w o f t o - 2 5 1 n - c h a n n e l m o s f e t g s d 1 2 3 s d g
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 2 a p m 2 5 0 6 n u b a b s o l u t e m a x i m u m r a t i n g s symbol parameter rating unit common ratings (t a = 25 c unless otherwise noted) v dss drain - source voltage 25 v gss gate - source voltage 2 0 v t j maximum junction temperature 150 c t stg storage temperature range - 55 to 150 c i s diode continuous forwar d current t c = 25 c 40 a mounted on large heat sink t c =25 c 150 i d p 300 s pulse drain current tested t c =100 c 80 a t c =25 c 60 * i d continuous drain current t c =100 c 50 a t c =25 c 50 p d maximum power dissipation t c =100 c 20 w r q jc thermal resistance - junction to case 2.5 c /w mounted on pcb of minimum footprint t a =25 c 150 i d p 300 s pulse drain current tested t a =100 c 80 a t a = 25 c 12 i d continuous drain current t a = 100 c 5.5 a t a = 25 c 1.25 p d maximum power dissipation t a = 100 c 0.25 w r q ja thermal resistance - junction to ambient 100 c /w note: * current limited by bond wire.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 3 a p m 2 5 0 6 n u b e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) n o t e s : a : p u l s e t e s t ; p u l s e w i d t h 3 0 0 m s , d u t y c y c l e 2 %. b : g u a r a n t e e d b y d e s i g n , n o t s u b j e c t t o p r o d u c t i o n t e s t i n g . apm2506n ub symbol parameter test condition min. typ. max. unit drain - source avalanche ratings e as drain - source avalanche energy i d = 20a, l=0.5mh 100 mj static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 25 v i dss ze ro gate voltage drain current v ds =20v, v gs =0v 1 m a v gs(th) gate threshold voltage v ds =v gs , i ds =250 m a 1 .3 1. 8 2 .5 v i gss gate leakage current v gs =20v, v ds =0v 100 na v gs =10v, i ds =40a 4. 8 6 r ds(on) a drain - source on - state resistance v gs = 4. 5v, i ds = 20 a 7 9 m w diode characteristics v sd a diode forward voltage i sd =20a, v gs =0v 0.7 1. 1 v t rr b reverse recovery time 30 ns q rr b reverse recovery charge i sd = 10 a, di sd /dt =100a/ m s 14 nc dynamic characteristics b r g gate r esistance v gs = 0 v,v ds =0v ,f=1mhz 1. 0 2.1 w c iss input capacitance 3100 c oss output capacitance 680 c rss reverse transfer capacitance v gs =0v, v ds =15v, f requency =1.0mhz 520 pf t d(on) turn - on delay time 19 t r turn - on rise time 20 t d(off) turn - off delay time 62 t f turn - off fall time v dd =15v, r l =15 w , i d s =1a, v gen =10 v , r g =6 w 43 ns gate charge characteristics b q g total gate charge 37.5 56 q gs gate - source charge 9.4 q gd gate - drain charge v ds =15v, v gs = 4.5 v, i d s =4 0 a 21 nc
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 4 a p m 2 5 0 6 n u b 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on minimum pad r q ja :100 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 t y p i c a l c h a r a c t e r i s t i c s p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) 0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 50 60 t c =25 o c 0.1 1 10 70 0.1 1 10 100 300 rds(on) limit 1s t c =25 o c 10ms 100ms dc 1ms normalized transient thermal resistance 0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 50 60 70 t c =25 o c, v g =10v
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 5 a p m 2 5 0 6 n u b v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) v g s - g a t e - s o u r c e v o l t a g e ( v ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e normalized threshold vlotage t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) 0.0 0.4 0.8 1.2 1.6 2.0 0 20 40 60 80 100 3v 2.5v v gs =3.5,4,5,6,7,8,9,10v -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 m a d r a i n - s o u r c e o n r e s i s t a n c e r ds(on) - on - resistance (m w ) 0 20 40 60 80 100 0 2 4 6 8 10 12 v gs =4.5v v gs =10v 1 2 3 4 5 6 7 8 9 10 2 4 6 8 10 12 14 i d = 40a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 6 a p m 2 5 0 6 n u b d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) v d s - d r a i n - s o u r c e v o l t a g e ( v ) c - capacitance (pf) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate-source voltage (v) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 r on @t j =25 o c: 4.8m w v gs = 10v i ds = 40a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 t j =150 o c t j =25 o c 0 5 10 15 20 25 0 1000 2000 3000 4000 5000 frequency=1mhz crss coss ciss 0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 8 9 10 v ds =15v i d = 40a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 7 a p m 2 5 0 6 n u b a v a l a n c h e t e s t c i r c u i t a n d w a v e f o r m s s w i t c h i n g t i m e t e s t c i r c u i t a n d w a v e f o r m s t d (on) t r t d (off) t f v gs v ds 90% 10% e as v dd t av i as v ds t p v dsx(sus) dut 0.01 w tp v dd v ds l i l r g v dd r d dut v gs v d s r g tp
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 8 a p m 2 5 0 6 n u b t o - 2 5 1 millimeters inches dim min. max. min. max. a 2.20 2.40 0.087 0.094 a1 1.02 1.27 0.040 0.050 b 0.50 0.88 0.020 0.035 b2 5.20 5.46 0.205 0.215 c 0.40 0.60 0.016 0.024 c1 0.40 0.60 0.016 0.024 d 5.40 6.20 0.213 0.244 d1 5.30 -- 0.209 -- e 6.35 6.70 0.250 0.264 e1 4.40 5.40 0.173 0.213 e1 4.50 4.70 0.177 0.185 h 12.90 15.25 0.508 0.600 b2 e d h e1 d1 b e1 c a1 e1 d1 a c1 p a c k a g i n g i n f o r m a t i o n
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 9 a p m 2 5 0 6 n u b p h y s i c a l s p e c i f i c a t i o n s t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p terminal material solder - plated copper (solder material : 90/10 or 63/37 snpb) , 100%sn lead solderability meets eia specification rsi86 - 91, ansi/j - std - 002 category 3. r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) c l a s s i f i c a t i o n r e f l o w p r o f i l e s profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/se cond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 0 a p m 2 5 0 6 n u b test item method description solderability mil-std-883d-2003 245c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125c pct jesd-22-b, a102 168 hrs, 100% rh, 121c tst mil-std 883d-1011.9 -65c ~ 150c, 200 cycles r e l i a b i l i t y t e s t p r o g r a m table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb entectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c c l a s s i f i c a t i o n r e f l o w p r o f i l e s ( c o n t . ) c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369
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